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SiR826DP
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
80
R DS(on) ( ? )
0.0048 at V GS = 10 V
0.0052 at V GS = 7.5 V
0.0065 at V GS = 4.5 V
I D (A) a
60
60
60
Q g (Typ.)
27.9 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
PowerPAK ? SO-8
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
?
Fixed Telecom
6.15 mm
1
S
S
5.15 mm
?
POL
D
2
S
?
DC/DC Converter
3
4
G
?
Primary and Secondary Side Switch
D
8
D
7
6
D
5
D
G
Bottom View
Ordering Information: SiR826DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
80
± 20
60 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
60 a
25 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = ? 0.1 mH
I DM
I S
I AS
E AS
20 b, c
100
60 a
5.6 b, c
35
61
A
mJ
T C = 25 °C
104
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
66.6
6.25 b, c
W
T A = 70 °C
4.0 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
15
0.9
20
1.2
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
Document Number: 67196
S10-2761-Rev. A, 29-Nov-10
www.vishay.com
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